advanced power n-channel insulated gate electronics corp. bipolar transistor features v ces high speed switching i c low saturation voltage v ce(sat) ,typ.=1.8v@i c =20a built-in fast recovery diode absolute maximum ratings , 1/8" from case for 5 seconds . notes: 1. pulse width limited by max. junction temperature . thermal data symbol rthj-c rthj-c(diode) rthj-a electrical characteristics@t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges --+ 100 na i ces - - 100 ua v ce(sat) - 1.8 2.3 v v ge(th) 2-6v q g - 100 160 nc q ge -24- nc q gc -40- nc t d(on) -50- ns t r -20- ns t d(off) - 135 - ns t f - 190 380 ns e on - 0.3 - mj e off - 0.9 - mj c ies - 3400 5440 pf c oes -75- pf c res -50- pf v f - 1.65 2 v t rr -50- ns q rr -80- nc data and specifications subject to change without notice rohs-compliant product 201105102 o c v ce =480v pulsed collector current 1 1 output capacitance f=1.0mhz o c 40 i dm collector to emitter diode forward current 1 40 a maximum power dissipation 300 units w 150 value i c =20a thermal resistance junction-case v ce =600v, v ge =0v v ge =15v thermal resistance junction-ambient v ce =v ge , i c =250ua v ge =15v, i c =20a v ge =+ 20v, v ce =0v thermal resistance junction-case turn-on delay time total gate charge parameter gate-to-emitter leakage current gate-emitter charge collector-emitter saturation voltage collector-emitter leakage current gate threshold voltage gate-collector charge i cm 125 maximum lead temp. for soldering purposes p d @t c =25 t j t stg operating junction temperature range t l -55 to 150 o c/w o c o c/w o c/w 1 storage temperature range parameter test conditions 1.5 v ge i c @t c =25 collector current gate-emitter voltage a v 160 a + 20 40 v 600 parameter input capacitance v ce =30v AP20GT60SW symbol v ces 600v 20a rating collector-emitter voltage units frd reverse recovery time i f =10a frd reverse recovery charge di/dt = 100 a/ s frd forward voltage i f =20a turn-on switching loss turn-off switching loss v ce =480v, i c =20a, v ge =15v, r g =5 , inductive load v ge =0v reverse transfer capacitance rise time fall time turn-off delay time i c @t c =100 collector current 20 a g c e to-3p c g c e
ap20gt60s w fig 1. typical output characteristics fig 2. gate charge characterisitics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature -- fig 5. gate threshold voltage fi g 6. t y pical capacitance characterisitics v.s. junction temperature 2 0 40 80 120 160 200 024681012 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c 0 1 2 3 4 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =40a i c =20a v ge =15v 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 junction temperature ( o c ) normalized v ge(th) (v) 0 20 40 60 80 100 120 0123456 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 0 1000 2000 3000 4000 5000 1 5 9 1317212529 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150 0 4 8 12 16 0 20 40 60 80 100 120 q g , gate charge (nc) v ge , gate -emitter voltage (v) i c =20a v cc =480v i c =10ma
fig7. power dissipation vs. junction fig 8. effective transient thermal temperature impedance fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig 11. forward characteristic of fig 12. turn-off soa diode 3 AP20GT60SW 0 5 10 15 20 048121620 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a 40 a 20 a t c =25 o c 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =60a 40 a 20 a t c = 150 o c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2 2.4 v f , forward voltage (v) i f , forward current (a) t j =25 o c t j =150 o c 0 40 80 120 160 0 50 100 150 200 junction temperature ( o c ) power dissipation (w) 1 100 0.1 1 10 100 1000 10000 v ce ,collector-emitter voltage(v) i c , peak collector current(a) v ge =15v t c =125 o c safe operating area
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